W19B320AT/B
8.3 DC Characteristics
8.3.1
CMOS Compatible
PARAMETER
SYM.
TEST CONDITIONS
MIN.
L IMITS
TYP.
MAX.
UNIT
Input Load Current
A9 Input Load Current
Output Leakage Current
I LI
I LIT
I LO
V IN =V SS to V DD , V DD = V DD (Max.)
V DD = V DD (Max.), A9 = 12.5V
V OUT =V SS to V DD , V DD =V DD (Max.)
#CE = V IL, #OE = V IH
5 MHz
-
-
-
-
-
-
-
10
± 1.0
35
± 1.0
16
μ A
μ A
μ A
mA
V DD Active Read Current
(Note 1, 2)
I CC1
Byte Mode
#CE = V IL , #OE = V IH
Word Mode
1 MHz
5 MHz
1 MHz
2
10
2
4
16
4
mA
mA
mA
V DD Active Write Current
(Note 2, 3)
V DD Standby Current (Note2)
V DD Reset Current (Note2)
Automatic Sleep Mode
Current (note 2, 4)
I CC2
I CC3
I CC4
I CC5
#CE = V IL, #OE = V IH, #WE = V IL
#CE = V DD ± 0.3V, #RESET = V DD
± 0.3V
#RESET = V SS ± 0.3V
V IH = V DD ± 0.3V, V IL = V SS ± 0.3V
-
-
-
-
15
0.2
0.2
0.2
30
5
5
5
mA
μ A
μ A
μ A
V DD Active Read-While-
Program Current (note 1, 2)
V DD Active Read-While-
Erase Current (note 1, 2)
V DD Active Program-While-
Erase-Suspended Current
I CC6
I CC7
I CC8
#CE = V IL, #OE = V IH
#CE = V IL, #OE = V IH
#CE = V IL, #OE = V IH
Byte
Word
Byte
Word
-
-
-
-
-
21
21
21
21
17
45
45
45
45
35
mA
mA
mA
(note 2, 5)
ACC Accelerated Program
Current, Word or Byte
Input Low Voltage
Input High Voltage
Voltage for #WP/ACC Sector
Protect/ Unprotect and
Program Acceleration
Voltage for AUTOSELECT
and Temporary Sector
Unprotected
I Acc
V IL
V IH
V HH
V ID
#CE = V IL, #OE = V IH
-
-
V DD =3.0V ± 10%
V DD =3.0V ± 10%
ACC Pin
V DD Pin
-0.5
0.7x V DD
8.5
8.5
5
15
-
-
-
-
10
30
0.8
V DD +0.3
9.5
12.5
mA
mA
V
V
V
V
Output Low Voltage
Output High Voltage
Low V DD Lock-Out Voltage
V OL
V OH1
V OH2
V LKO
I OL = 4.0 mA, V DD = V DD (Min.)
I OH = -2.0 mA, V DD = V DD (Min.)
I OH = -100 μ A, V DD = V DD (Min.)
-
0.85 V DD
V DD - 0.4
2.3
-
-
-
-
0.45
-
-
2.5
V
V
V
Notes:
1.
2.
3.
4.
The I CC current listed is typically less than 2 mA/ MHz, with #OE at V IH .
Maximum I CC specifications are tested with V DD = V DD max.
I CC active while Embedded Erase or Embedded Program is in progress.
Automatic sleep mode enables the low power mode when addresses remain stable for t ACC + 30 ns. Typical sleep mode
current is200 nA.
Publication Release Date: December 27, 2005
- 37 -
Revision A4
相关PDF资料
W19B320BTT7H IC FLASH 32MBIT 70NS 48TSOP
W25Q128BVEIG IC SPI FLASH 128MBIT 8WSON
W25Q16BVSFIG IC SPI FLASH 16MBIT 16SOIC
W25Q16CVSFIG IC SPI FLASH 16MBIT 16SOIC
W25Q16DWSFIG IC FLASH SPI 16MBIT 16SOIC
W25Q16VSFIG IC FLASH 16MBIT 80MHZ 16SOIC
W25Q32BVZPIG IC SPI FLASH 32MBIT 8WSON
W25Q32DWZEIG IC FLASH SPI 32MBIT 8WSON
相关代理商/技术参数
W19B320B 制造商:WINBOND 制造商全称:Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory
W19B320BB 制造商:WINBOND 制造商全称:Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory
W19B320BB-H 制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations
W19B320BB-M 制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations
W19B320BT 制造商:WINBOND 制造商全称:Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory
W19B320BT-H 制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations
W19B320BT-M 制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations
W19B320BTT7H 功能描述:IC FLASH 32MBIT 70NS 48TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步,DDR II 存储容量:18M(1M x 18) 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA(13x15) 包装:托盘 其它名称:71P71804S200BQ